EN
Description
KCE® Reaction sintered silicon carbide cantilever paddles/propellers, formed by casting or 3D printing process, reaction sintered, then sandblasted and precision machined according to the drawing requirements to meet the usage requirements. they are key components of semiconductor wafer loading systems, with main specifications of 2378mm, 2550mm, 2660mm, etc. It is used in the (diffusion) coating process of polycrystalline silicon wafers or monocrystalline silicon wafers in diffusion furnaces, and plays a role in carrying and transporting silicon wafers in high temperature environments (1000-1300 ℃).
Specifications
KCE® SiSiC/RBSiC Technical Data Sheet
| Technical Parameters | Unit | Value |
| Silicon Carbide content | % | 85 |
| Free Silicon content | % | 15 |
| Bulk Density 20°C | g/cm³ | ≥3.02 |
| Open Porosity | Vol % | 0 |
| Hardness HK | kg/mm² | 2600 |
| Flexural Strength 20°C | MPa | 250 |
| Flexural Strength 1200°C | MPa | 280 |
| 20 – 1000°C (Coefficient of Thermal Expansion) | 10–6 K–1 | 4.5 |
| Thermal Conductivity 1000°C | W/m.K | 45 |
| Static 20°C(Modulus of Elasticity ) | GPa | 330 |
| Working temperature | °C | 1300 |
| Max. Service Temp (air) | °C | 1380 |
Applications
Reaction sintered silicon carbide cantilever paddles/propellers are the key components of semiconductor wafer loading system.
Advantages
Silicon carbide cantilever paddles/propellers have stable performance, do not deform in high temperature environments, have a large wafer loading capacity, are resistant to rapid cooling and heating, have a small coefficient of thermal expansion, and have a long service life.
The maximum operating temperature can reach 1380 ℃; Low thermal expansion; Extremely strong thermal shock stability; The thermal expansion coefficient of cantilever propeller and LPCVD coating is similar, and their application in LPCVD greatly extends the maintenance and cleaning cycle and significantly reduces pollutants.
