EN
Description
KCE® Reaction sintered silicon carbide atmosphere furnace tubes used in semiconductor equipment are mainly divided into two types: horizontal and vertical.
Horizontal furnace tube: In this type of furnace tube, the wafer is placed on a silicon carbide wafer boat, which is then placed on a carrier paddle made of SiC. The carrying paddle is responsible for loading the crystal boat and wafer, and pushing them into the furnace tube as a whole. In the constant temperature zone of the furnace tube, the wafer undergoes the required chemical reactions. After the reaction is complete, the wafer will also be slowly pulled out to avoid bending or cracking caused by temperature differences inside and outside the furnace. The design of the horizontal furnace tube enables the wafer to maintain good uniformity and stability during the reaction process.
Vertical furnace tube: Unlike horizontal furnace tubes, wafers in vertical furnace tubes are placed on a silicon carbide tower. The wafer enters the silicon carbide furnace tube for processing as the tower slowly rises. After the reaction is complete, the wafer also needs to be slowly lowered to prevent bending or cracking caused by temperature differences. The design of vertical furnace tubes is beneficial for saving space and may have better reaction effects in certain processes
Specifications
KCE® SiSiC/RBSiC Technical Data Sheet
| Technical Parameters | Unit | Value |
| Silicon Carbide content | % | 85 |
| Free Silicon content | % | 15 |
| Bulk Density 20°C | g/cm³ | ≥3.02 |
| Open Porosity | Vol % | 0 |
| Hardness HK | kg/mm² | 2600 |
| Flexural Strength 20°C | MPa | 250 |
| Flexural Strength 1200°C | MPa | 280 |
| 20 – 1000°C (Coefficient of Thermal Expansion) | 10–6 K–1 | 4.5 |
| Thermal Conductivity 1000°C | W/m.K | 45 |
| Static 20°C(Modulus of Elasticity ) | GPa | 330 |
| Working temperature | °C | 1300 |
| Max. Service Temp (air) | °C | 1380 |
Applications
KCE® Reaction sintered silicon carbide furnace tube for semiconductor equipment is one of the key equipment in the semiconductor manufacturing process. Furnace tubes have a wide range of applications in semiconductor processes, including diffusion, drive in, oxidation, deposition, annealing, and sintering. These processes are crucial for the performance and quality of semiconductor wafers. The silicon carbide furnace tubes are usually used in equipment such as semiconductor oxidation diffusion furnaces, LPCVD, and annealing furnaces.
Advantages
Semiconductor grade silicon carbide furnace tubes have high purity, high temperature resistance, and good long-term stability. They have a thin film of high-purity silicon carbide material, which avoids the introduction of impurities and reduces environmental pollution during the preparation process. They are suitable for processes that require high cleanliness.
