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silicon carbide sic atmosphere furnace tubes784-0

Silicon carbide (SiC) atmosphere furnace tubes

Home >  Products >  RBSiC/SiSiC components for new energy >  Silicon carbide (SiC) atmosphere furnace tubes

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Silicon carbide (SiC) atmosphere furnace tubes

Description

KCE® Reaction sintered silicon carbide atmosphere furnace tube, using casting molding, with large size, high strength, high purity, high stability, and long service life, can meet the production and manufacturing of high-temperature process sections of photovoltaic cells.

Specifications

KCE® SiSiC/RBSiC Technical Data Sheet

Technical Parameters Unit Value
Silicon Carbide content % 85
Free Silicon content % 15
Bulk Density 20°C g/cm³ ≥3.02
Open Porosity Vol % 0
Hardness HK kg/mm² 2600
Flexural Strength 20°C MPa 250
Flexural Strength 1200°C MPa 280
20 – 1000°C (Coefficient of Thermal Expansion) 10–6 K–1 4.5
Thermal Conductivity 1000°C W/m.K 45
Static 20°C(Modulus of Elasticity ) GPa 330
Working temperature °C 1300
Max. Service Temp (air) °C 1380

Applications

KCE® Reaction sintered silicon carbide furnace tubes are a key component of photovoltaic cell loading system.

Suitable for high-temperature furnace chamber components used in production processes related to photovoltaic cells.

They can meet the production and manufacturing of high-temperature process sections of photovoltaic cells.

Suitable for LP process, PE process, oxidation process, and boron expansion process of solar cells.

Advantages

The photovoltaic grade silicon carbide furnace tube has a large inner diameter and length, extremely high thermal stability, corrosion resistance, and can effectively adapt to the new generation of photovoltaic equipment loading systems, greatly improving the long-term stability of the photovoltaic equipment furnace cavity. it plays a key role in the fields of new energy photovoltaics and new energy vehicles.

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